Diodes Inc.’s HB LED driver supports off-line illumination


DALLAS, USA: Diodes Inc., a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, announced the release of the AL9910.

Provided in standard SO-8 and high power dissipation exposed pad SO-8 packages, the AL9910 high brightness LED driver will support universal AC input voltages from 85V to as high as 265V. For interior and exterior off-line lighting products, the exposed pad SO-8 variant in particular helps significantly increase device reliability by minimizing temperature rise.

The AL9910 utilizes a rugged high voltage process technology allowing it to withstand input voltage surges of up to 500V. System reliability is further improved by the device’s built-in over-temperature protection.

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Cree releases revolutionary LED light bulb


DURHAM, USA: About 131 years ago, Thomas Alva Edison was granted US patent 223,898 for “Improvement in Electric Lamps and in the method of manufacturing.” Today’s LED lighting revolution heralds the demise of Edison’s 1880, horse-and-buggy era invention.

In an industry first, Cree, Inc. (Nasdaq: CREE) has demonstrated the brightest, most efficient, LED-based A-lamp that can meet ENERGY STAR performance requirements for a 60 watt standard LED replacement bulb. This unprecedented level of performance is the result of Cree innovation, Cree barrier-breaking LED performance, Cree TrueWhite Technology and patented Cree remote phosphor technology.

“This is a significant milestone for the industry,” said Chuck Swoboda, Cree chairman and CEO. “In the race to commercialize low-cost, energy-efficient LED bulbs, the industry has forgotten that LED lighting is supposed to look as good as the technology it is replacing. This is the first no compromise replacement for a 60 watt incandescent bulb.”

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ROHM high-performance infrared LEDs ideal for proximity sensing


SAN DIEGO, USA: A new series of high-performance infrared LEDs ideally suited for proximity sensor applications is now available from ROHM Semiconductor. The SIM-030/031ST and SIM-040/041ST surface-mount IR LEDs feature breakthrough IR wavelength technology providing peak output of 850/870 nm, compared to 950 nm for comparable devices.

The 850/870 nm level is much closer to the peak wave sensitivity of phototransistors (sensors), thus achieving higher efficiency proximity sensing and energy savings of up to 66%. In addition, the small package footprint and low-profile further enhance their application in cell phones and other portable devices.

The SIM-030/031ST, the smaller of the two devices, has a 2.3×1.95mm footprint and a height of just 0.9mm. With a forward current (If) of 100 mA, the device delivers typical emission strength of 30 mW/sr (milliwatts per steradian). The slightly larger SIM-040/041ST (3.1×2.25×1.6mm) provides 40 mW/sr, typical emission strength.

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